Samsung develops technology for 144 MP photosensors
At the IEDM 2019 trade fair, the semiconductor division of Samsung presented a new 14 nm engraving technology for CMOS sensors. The idea is to optimize energy consumption for future 144-megapixel sensors.
The race for the number of pixels on smartphone photosensors is not about to stop. After the 48, 64 or 108-megapixel sensors, Samsung took a new step by unveiling a new technology for 144-megapixel sensors at the 2019 MEI show which took place last week in San Francisco.
This new technology is called 14nm FinFET and consists of the use of a 14nm etching of the layer of transistors of the CMOS sensor, against 28mm currently. Concretely, this would, therefore, allow for smaller components within the sensor itself, and therefore less energy loss, even at the same photosite size.
Above all, as the Image Sensors World site, spotted by GSM Arena specifies, this would also allow better consumption management for sensors with a very high number of megapixels: “the 14 nm FinFET process should reduce energy consumption by 42% for 144-megapixel sensors ”.